- STG80H65FBD7 650 V, 80 A trench gate field-stop HB series high-speed IGBT die in D7 packing
- STG30M65F2D7 650 V、30 A沟槽栅场截止低损耗M系列IGBT晶片，D7封装
- STG15M65F2D7 650 V、15 A沟槽栅场截止低损耗M系列IGBT晶片，D7封装
- STG200M65F2D8AG 汽车级650 V、200 A沟槽栅场截止M系列IGBT晶片，D8封装
- STG20M65F2D7 650 V、20 A沟槽栅场截止M系列低损耗IGBT，D7封装
- STG50M65F2D7 650 V、50 A沟槽栅场截止M系列低损耗IGBT晶片，D7封装
- STG60H65FBD7 Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing
- STG200G65FD8AG Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing
- STG50M170F3D7 Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing
- STG25M120F3D7 1200 V、25 A沟槽栅场截止M系列低损耗IGBT晶片，D7封装
- STG40M120F3D7 1200 V、40 A沟槽栅场截止M系列低损耗IGBT晶片，D7封装
- STG15M120F3D7 1200 V, 15 A trench gate field-stop M series low-loss IGBT die in D7 packing
- STG75M120F3D7 1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D7 packing
- STG25H120F2D7 1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
- STG50M120F3D7 Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing
- STG8M120F3D7 1200 V、8 A沟槽栅场截止M系列低损耗IGBT晶片，D7封装
- STG15M120F3D8 1200 V、15 A沟槽栅场截止M系列低损耗IGBT晶片，D8封装
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