意法半导体的P沟道MOSFET产品组合通过增加沟槽栅极器件得到了扩展。这些新型STripFET MOSFET具有极低的导通电阻。采用超小型封装，专为便携应用设计。
我们的P沟道MOSFET产品组合的主要特点：
- 超低的RDS(on)，增强了应用的效率
- 标准、逻辑和超级阈值，增强了设计的灵活性
此类P沟道功率MOSFET经过优化，可满足负载开关，线性稳压器和汽车应用的广泛设计要求。它们提供了多种小型封装选项，例如D2PAK, DPAK、TO-220、SO-8、SOT-223、SOT23-6L和PowerFLAT 2x2。
特别推荐
Automotive-grade p-channel MOSFETs
ST has extended its offering of automotive-grade MOSFETs with the introduction of two p-channel trench-based MOSFETs. Based on ST’s STripFET H6 and F6 technology respectively, the STD37P3H6AG (-30 V, standard level driven) and STD45P4LLF6AG (-40 V, logic level driven) are housed in a DPAK package. They help simplify circuitry while optimizing performance and component count in automotive applications such as high-side switches, reverse polarity protection and audio amplifiers.