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STPOWER碳化硅MOSFET

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Create more efficient and compact systems than ever with STPOWER SiC MOSFETs

Bring the advantages of innovative wide bandgap materials (WBG) to your next design thanks to STPOWER SiC MOSFETs. With an extended voltage range, from 650 to 2200 V, ST's silicon-carbide MOSFETs offer one of the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance per area.

The main features of our STPOWER SiC MOSFETs include:

  • Automotive-grade (AG) qualified devices
  • Very high temperature handling capability (max. TJ = 200 °C)
  • Very high switching frequency operation and very low switching losses
  • Low on-state resistance
  • Gate drive compatible with existing ICs
  • Very fast and robust intrinsic body diode

Our STPOWER SiC MOSFET portfolio includes state-of-the-art packages (HiP247, H2PAK-7, TO-247 long leads, STPAK and HU3PAK) specifically designed to meet the stringent requirements of automotive and industrial applications.

In addition to the latest packaging technologies, our SiC MOSFETs, including G3 devices, are available as bare die. Compliant with the most stringent automotive requirements including Wafer-Level Burn-In (WLBI) and Known Good Die (KGD) processes, bare die are available as reconstructed wafers or in tape & reel packaging.

Check our Innovation and Technology page about SiC.