Product overview
描述
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.-
All features
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power loss
精选 视频
All tools & software
All resources
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产品规格 (1)
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28 Jul 2014 |
28 Jul 2014
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应用手册 (5)
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13 Sep 2018 |
13 Sep 2018
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13 Sep 2018 |
13 Sep 2018
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07 Jan 2019 |
07 Jan 2019
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13 Sep 2018 |
13 Sep 2018
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13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
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21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
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08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
All resources
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硬件型号、CAD库及SVD (1)
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ZIP | 11 Dec 2020 |
11 Dec 2020
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样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STR2N2VH5 | 5 distributors | Buy Direct |
批量生产
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EAR99 | NEC | Tape And Reel | SOT-23 | - | - | CHINA | 0.489 / 1k |