Product overview
描述
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.-
All features
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power loss
精选 视频
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
Available in 10 different RDS(on) values and 9 packages
All tools & software
All resources
| Resource title | Latest update |
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产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 28 Jul 2014 |
28 Jul 2014
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应用手册 (5)
| Resource title | Latest update | |||
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| 13 Sep 2018 |
13 Sep 2018
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| 13 Sep 2018 |
13 Sep 2018
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| 07 Jan 2019 |
07 Jan 2019
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| 13 Sep 2018 |
13 Sep 2018
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| 13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STR2N2VH5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
| Resource title | Latest update |
|---|
硬件型号、CAD库及SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 11 Dec 2020 |
11 Dec 2020
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STR2N2VH5 | 5 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | SOT-23 | - | - | CHINA | 0.489 / 1k | |
