ST’s STripFET F7 series of low-voltage MOSFETs, ranging from 40 to 120 V, feature an enhanced trench-gate structure that lowers device on-state resistance while also reducing internal capacitances and gate charge for faster and more efficient switching. Their excellent figure of merit (FoM) and high avalanche ruggedness help simplify designs and reduce equipment size and cost while increasing reliability in applications such as telecom or computing systems, solar inverters, motor control and automotive applications.
Features and benefits:
- Among lowest RDS(on) in the market
- Minimal RDS(on) x Qg for increased system efficiency and more compact designs
- Lowest Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Compared to the previous STripFET F4 and F3 series, the new F7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.
Best solution for high power, high density and cool design
AEC-Q101-qualified 40 V STripFET F7 MOSFETs in PowerFLAT 5x6
ST has extended its portfolio of 40 V automotive-grade power MOFSETs with the addition of two new 120 A STripFET F7 devices in the 0.88 mm profile PowerFLAT 5x6 package with wettable flanks. The 2.1 mΩ (typ) STL140N4F7AG and 1.68 mΩ (typ) STL190N4F7AG combine superior switching performance and energy efficiency with very low emitted noise and high immunity to false turn-on. Typical applications include high-current power train, body, or chassis and safety systems, as well as motor drives such as in electric power steering (EPS).
In addition to the automotive-grade products, a wide range of PowerFLAT STripFET F7 devices is also available in the full voltage range from 40 to 100 V, targeting the most advanced industrial applications.
We have extended the 60V STripFET F7 low-voltage MOSFET series adding new products with improved figure of merit and high avalanche ruggedness to meet tough energy-efficiency specifications and maximize power density.