Optimized for high-density, high-performance power management systems, ST’s STripFET H7 series of trench-gate low-voltage MOSFETs (30 V) combine an extremely low on-resistance and ultra-low capacitances with an optimized built-in Schottky diode for higher switching frequency operation in applications such as telecom, motherboards, and solar inverters. Compared to the previous STripFET H5 and H6 series, the new H7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.
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STP410N4F7AG
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 180 A STripFET F7 in a TO-220 package
