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STripFET H7系列

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意法半导体的STripFET H7系列沟槽栅极低压MOSFET（30 V）针对高密度、高性能电源管理系统进行了优化，结合了超低导通电阻和超低电容。

该系列产品具有经过优化的内置肖特基二极管，可在电信、主板和太阳能逆变器等应用中以更高的开关频率工作。

相比于先前的STripFET H5 和 H6系列产品，最新的低压H7 MOSFET系列在单位晶片面积上具有明显更低的通态电阻。这有助于减少并联器件的数量，进而简化了设计者对于高功率设计的需求。

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