Optimized for high-density, high-performance power management systems, ST’s STripFET H7 series of trench-gate low-voltage MOSFETs (30 V) combine an extremely low on-resistance and ultra-low capacitances with an optimized built-in Schottky diode for higher switching frequency operation in applications such as telecom, motherboards, and solar inverters. Compared to the previous STripFET H5 and H6 series, the new H7 series features a much lower on-state resistance per die area. This in turn simplifies designers’ needs for high-power designs by reducing the number of paralleled devices.
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- 300-400V (内置钳位)绝缘栅双极晶体管(IGBT) (12)
- Bare die IGBTs (8)