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This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
主要特性
- Ultra low threshold gate drive
- 100% avalanche tested
- Low gate charge
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STS6NF20V
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STS6NF20V | 6 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | SO-8 | -55 | 150 | CHINA | 0.328 / 1k | |
