Product overview
描述
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.-
All features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
精选 视频
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
Available in 10 different RDS(on) values and 9 packages
All tools & software
All resources
| Resource title | Latest update |
|---|
产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 17 Feb 2021 |
17 Feb 2021
|
应用手册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 13 Sep 2018 |
13 Sep 2018
|
用户手册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 21 Oct 2016 |
21 Oct 2016
|
宣传册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 08 May 2020 |
08 May 2020
|
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STS7P4LLF6
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STS7P4LLF6 |
批量生产
|
SO-8 | 工业 | Ecopack2 |
|
STS7P4LLF6
Package:
SO-8Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STS7P4LLF6 | 3 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | SO-8 | - | - | CHINA | 0.7 / 1k | |
