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This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ II (P-channel) and STripFET™ V (N-channel) technologies. The resulting transistors show extremely high packing density for low on-resistance and rugged avalanche characteristics.
主要特性
- Conduction losses reduced
- Switching losses reduced
- Low threshold drive
- Standard outline for easy automated surface mount assembly
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产品规格 (1)
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应用手册 (5 of 6)
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用户手册 (1)
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
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| 08 May 2020 |
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STS8C5H30L
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STS8C5H30L | 5 distributors | Buy Direct |
NRND
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EAR99 | NEC | Tape And Reel | SO-8 | - | - | CHINA | ||
