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This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
主要特性
- RDS(on) * Qg industry benchmark
- Very low switching gate charge
- Extremely low on-resistance RDS(on)
- Low gate drive power losses
- High avalanche ruggedness
精选 视频
All tools & software
All resources
产品规格 (1)
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| 19 Sep 2016 |
19 Sep 2016
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应用手册 (5 of 6)
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| 13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
| Resource title | Latest update | |||
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
| Resource title | Latest update | |||
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| 08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STS8DN3LLH5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STS8DN3LLH5 |
批量生产
|
SO-8 | 工业 | Ecopack2 |
|
STS8DN3LLH5
Package:
SO-8Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STS8DN3LLH5 | 3 distributors | Buy Direct |
批量生产
|
EAR99 | NEC | Tape And Reel | SO-8 | - | - | CHINA | 0.451 / 1k | |
