Product overview
描述
This device is a dual N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.-
All features
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Logic level
精选 视频
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
All tools & software
All resources
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产品规格 (1)
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| 07 Dec 2016 |
07 Dec 2016
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应用手册 (4)
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| 13 Sep 2018 |
13 Sep 2018
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| 07 Jan 2019 |
07 Jan 2019
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| 08 Nov 2019 |
08 Nov 2019
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| 13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 21 Oct 2016 |
21 Oct 2016
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宣传册 (4)
| Resource title | Latest update | |||
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| 22 Feb 2021 |
22 Feb 2021
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| 25 Sep 2019 |
25 Sep 2019
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| 08 May 2020 |
08 May 2020
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| 13 Jun 2019 |
13 Jun 2019
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STS8DN6LF6AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
| Resource title | Latest update |
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硬件型号、CAD库及SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 31 Jan 2017 |
31 Jan 2017
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STS8DN6LF6AG | 3 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tape And Reel | SO-8 | - | - | CHINA | ||
