产品概述
描述
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
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所有功能
- Very low profile package
- Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STT5N2VH5
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符号
封装
3D模型
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STT5N2VH5 | distributors 无法联系到经销商，请联系我们的销售办事处 | NRND | EAR99 | NEC | Tape and Reel | SOT23-6L | - | - | CHINA | | ||
distributors
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