产品概述
描述
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
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所有功能
- Industry’s lowest RDS(on) * area
- Industry's best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STU2N80K5
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
全部资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STU2N80K5 | | | distributors 无法联系到经销商，请联系我们的销售办事处 | IPAK | Tube | CHINA | EAR99 | NEC | - | - | - | |||
STU2N80K5 批量生产
Budgetary Price (US$)*/Qty:
-
distributors
无法联系到经销商，请联系我们的销售办事处
封装:
IPAK
包装类型:
Tube
RoHS:
-
Country of Origin:
CHINA
ECCN (US):
EAR99
ECCN (EU):
NEC
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