STU3LN62K3

NRND

N沟道620 V、2.5 Ohm、2.5 A SuperMESH3(TM) 功率MOSFET,IPAK封装

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概述
样片和购买
解决方案
资源
工具与软件
质量与可靠性
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  • These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.

    主要特性

    • 100% avalanche tested
    • Very low intrinsic capacitance
    • Extremely high dv/dt capability
    • Zener-protected
    • Improved diode reverse recovery characteristics

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00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS7100
      N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3™ Power MOSFET DPAK, TO-220FP, TO-220, IPAK
      1.2
      1.16 MB
      PDF
      DS7100

      N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3™ Power MOSFET DPAK, TO-220FP, TO-220, IPAK

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      PDF
      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
      203.54 KB
      PDF
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode

      ST MOSFET Finder, the new app for Android and iOS

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STU3LN62K3
NRND
IPAK 工业 Ecopack2

STU3LN62K3

Package:

IPAK

Material Declaration**:

PDF XML

Marketing Status

NRND

Package

IPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
封装
包装类型
供货状态
ECCN (US)
Country of Origin
Budgetary Price (US$)*/Qty
STU3LN62K3 没有经销商,请联系我们的销售办事处 IPAK Tube
NRND
EAR99 CHINA

STU3LN62K3

封装

IPAK

包装类型

Tube

Budgetary Price (US$)*/Qty

供货状态

NRND

Budgetary Price (US$)* / Qty

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商