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This N-Channel Power MOSFET product utilizes the 6thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
主要特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
精选 视频
All tools & software
All resources
产品规格 (1)
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19 Sep 2016 |
19 Sep 2016
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应用手册 (5)
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13 Sep 2018 |
13 Sep 2018
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13 Sep 2018 |
13 Sep 2018
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07 Jan 2019 |
07 Jan 2019
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13 Sep 2018 |
13 Sep 2018
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13 Sep 2018 |
13 Sep 2018
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用户手册 (1)
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21 Oct 2016 |
21 Oct 2016
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宣传册 (1)
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08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STU75N3LLH6 | 无法联系到经销商,请联系我们的销售办事处 |
NRND
|
EAR99 | NEC | Tube | IPAK | - | - | CHINA | 0.341 / 1k |
供货状态
NRNDECCN (US)
EAR99Budgetary Price (US$)*/Qty
0.341 / 1k