STU7NF25

NRND
Design Win

N沟道250 V、0.29 Ohm典型值、8 A STripFET(TM) II功率MOSFET,IPAK封装

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产品概述

描述

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

EDA符号、封装和3D模型

STMicroelectronics - STU7NF25

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质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
STU7NF25
NRND
IPAK 工业 Ecopack2

STU7NF25

Package:

IPAK

Material Declaration**:

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Marketing Status

NRND

Package

IPAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

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样片和购买

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STU7NF25
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STU7NF25 NRND

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STU7NF25

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商