产品概述
描述
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.-
所有功能
- Conduction losses reduced
- Low profile, very low parasitic inductance
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产品规格 (1)
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28 Nov 2014 | 28 Nov 2014 |
应用手册 (5)
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13 Sep 2018 | 13 Sep 2018 |
用户手册 (1)
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21 Oct 2016 | 21 Oct 2016 |
宣传册 (5)
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13 Jun 2019 | 13 Jun 2019 |