产品概述
描述
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.-
所有功能
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
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SPICE models (1)
Resource title | 版本 | Latest update | ||
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ZIP | 1.0 | 11 Dec 2020 | 11 Dec 2020 |