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These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
主要特性
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
样片和购买
| 型号 | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STW11NM80 | TO-247 | Tube |
Active
|
- | - | EAR99 | CHINA | Check Availability |
STW11NM80
Package
TO-247Packing Type
TubeUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
精选 视频
开发工具硬件
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Picture 型号 制造商 描述 ST MOSFET Finder ST MOSFET product finder application for Android and iOS 型号MOSFET product finder application for Android and iOS
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| 型号 | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STW11NM80 |
Active
|
TO-247 | 工业 | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
