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These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
主要特性
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
精选 视频
All tools & software
All resources
产品规格 (1)
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| 26 Oct 2020 |
26 Oct 2020
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应用手册 (4)
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| 13 Sep 2018 |
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| 13 Sep 2018 |
13 Sep 2018
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技术文档 (1)
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| 13 Nov 2016 |
13 Nov 2016
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用户手册 (1)
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| 21 Oct 2016 |
21 Oct 2016
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宣传册 (2)
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| 22 Jan 2020 |
22 Jan 2020
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| 08 May 2020 |
08 May 2020
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CAD/EDA Symbols, Footprints and Models
All resources
硬件型号、CAD库及SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 10 Aug 2016 |
10 Aug 2016
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STW11NM80 | 7 distributors | Buy Direct |
批量生产
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EAR99 | NEC | Tube | TO-247 | -65 | 150 | CHINA | ||
