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These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
主要特性
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
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质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STW11NM80 | 批量生产 | TO-247 | 工业 | Ecopack2 | |
STW11NM80
Package:
TO-247Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 封装 | 包装类型 | 供货状态 | ECCN (US) | Country of Origin | Budgetary Price (US$)*/Qty | |
|---|---|---|---|---|---|---|---|---|---|
| STW11NM80 | 8 distributors | 立即购买 | TO-247 | Tube | 批量生产 | EAR99 | CHINA |
