N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package

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  • These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

    Key Features

    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance

样片和购买

产品型号
封装
包装类型
供货状态
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ECCN (US)
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从ST订购
STW18NM80 TO-247 Tube
批量生产
- - EAR99 CHINA 查看供货情况

Distributor availability ofSTW18NM80

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 515 1 Order Now
RS COMPONENTS EUROPE 36 1 Order Now

代理商库存报告日期: 2019-11-15

代理商名称

DIGIKEY

库存

515

Min.Order

1

地区

WORLDWIDE Order Now

RS COMPONENTS

库存

36

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-11-15

STW18NM80

封装

TO-247

包装类型

Tube

单价(US$)

*

Distributor availability ofSTW18NM80

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 515 1 Order Now
RS COMPONENTS EUROPE 36 1 Order Now

代理商库存报告日期: 2019-11-15

代理商名称

DIGIKEY

库存

515

Min.Order

1

地区

WORLDWIDE Order Now

RS COMPONENTS

库存

36

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-11-15

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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      DS6113
      N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages
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      N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages

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      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
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      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

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      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
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      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

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      UM1575
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      Spice model tutorial for Power MOSFETs

产品型号 供货状态 封装 等级规格 符合RoHS级别 Material Declaration**
STW18NM80
批量生产
TO-247 工业 Ecopack2

STW18NM80

Package:

TO-247

Material Declaration**:

Marketing Status

批量生产

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.