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STW36N60M6

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储存到myST

N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-247 package

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样片和购买
概述
工具与软件
资源
解决方案
质量与可靠性
Sales Briefcase
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样片和购买
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快速链接

  • The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) * area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

    主要特性

    • Reduced switching losses
    • Lower RDS(on) x area vs previous generation
    • Low gate input resistance
    • 100% avalanche tested
    • Zener-protected
    阅读更多 阅读较少信息

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
Country of Origin
从分销商订购
从ST订购
STW36N60M6 TO-247 Tube
Active
- - EAR99 CHINA 查看供货情况

Distributor availability ofSTW36N60M6

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 340 1 Order Now
MOUSER WORLDWIDE 860 1 Order Now
Farnell Element14 EUROPE 75 1 Order Now

代理商库存报告日期: 2019-08-08

代理商名称

DIGIKEY

库存

340

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

860

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

75

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-08-08

Get sample

STW36N60M6

封装

TO-247

包装类型

Tube
More Info

Unit Price (US$)

*

Distributor availability ofSTW36N60M6

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 340 1 Order Now
MOUSER WORLDWIDE 860 1 Order Now
Farnell Element14 EUROPE 75 1 Order Now

代理商库存报告日期: 2019-08-08

代理商名称

DIGIKEY

库存

340

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

860

Min.Order

1

地区

WORLDWIDE Order Now

Farnell Element14

库存

75

Min.Order

1

地区

EUROPE Order Now

代理商库存报告日期: 2019-08-08

供货状态

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

精选 视频

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900 V MDmesh K5 MOSFETs
900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

Getting started with eDesignSuite
Getting started with eDesignSuite

The smart way to design your application

800 V MDmesh K5 MOSFETs
800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

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Power MOSFETs

Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.

Super-junction high-voltage MOSFETs for resonant topologies

The MDmesh M6 MOSFET series (600 V to 700 V) opens the door to power converter designers for new scenarios targeting high efficiency and power density.

适合您的资源

开发工具硬件

    • 产品型号
      ST MOSFET Finder

      MOSFET product finder application for Android and iOS

00 选择要下载的文档

技术文档

    • Description 版本 文档大小 操作
      		DS11304
      N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFETs in TO-220 and TO-247 packages       		3.0
      799.23 KB
      		PDF
      DS11304

      N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFETs in TO-220 and TO-247 packages

      PDF
    • Description 版本 文档大小 操作
      		AN4250
      Fishbone diagram for power factor correction       		1.1
      772.32 KB
      		PDF
      		AN2842
      Paralleling of power MOSFETs in PFC topology       		1.4
      896.91 KB
      		PDF
      		AN2344
      Power MOSFET avalanche characteristics and ratings       		1.3
      880.04 KB
      		PDF
      		AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies       		1.0
      1.09 MB
      		PDF
      		AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters       		1.1
      347.01 KB
      		PDF
      AN4250

      Fishbone diagram for power factor correction

      PDF
      AN2842

      Paralleling of power MOSFETs in PFC topology

      PDF
      AN2344

      Power MOSFET avalanche characteristics and ratings

      PDF
      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      PDF
      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

      PDF
    • Description 版本 文档大小 操作
      		TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products       		1.0
      657.71 KB
      		PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

      PDF
    • Description 版本 文档大小 操作
      		UM1575
      Spice model tutorial for Power MOSFETs       		1.3
      1.51 MB
      		PDF
      UM1575

      Spice model tutorial for Power MOSFETs

      PDF

硬件型号、CAD库及SVD

    • Description 版本 文档大小 操作
      		stw36n60m6 Pspice Model 1.0
      11.15 KB
      		ZIP

      stw36n60m6 Pspice Model

      ZIP

出版刊物和宣传资料

    • Description 版本 文档大小 操作
      		600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency 1.0
      760.45 KB
      		PDF

      600 to 700 V MDmesh™ M6 High-voltage, SJ MOSFETs to boost the efficiency

      PDF
产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STW36N60M6
Active
TO-247 工业 Ecopack2

STW36N60M6

Package:

TO-247

Material Declaration**:

PDF XML
More Info

Marketing Status

Active

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.