产品概述
描述
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.-
所有功能
- 100% avalanche tested
- High speed switching
- Intrinsic capacitances and Qg minimized
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
- Fully isolated TO-3PF plastic packages
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特别推荐
All tools & software
EDA符号、封装和3D模型
全部资源
Resource title | 版本 | Latest update |
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SPICE models (1)
Resource title | 版本 | Latest update | ||
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ZIP | 1.0 | 11 Dec 2020 | 11 Dec 2020 |
样片和购买
产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度(ºC) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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最小值 | 最大值 | |||||||||||
STW4N150 | 3 distributors | 批量生产 | EAR99 | NEC | Tube | TO-247 | -55 | 150 | CHINA | |