STW4N150

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产品概述

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Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest R_DS(on) per area, unrivalled gate charge and switching characteristics.

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100% avalanche tested

High speed switching

Intrinsic capacitances and Qg minimized

Creepage distance path is 5.4 mm (typ.) for TO-3PF

Fully isolated TO-3PF plastic packages
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900 V MDmesh K5 MOSFETs

Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ

Watch the video (03:57)

800 V MDmesh K5 MOSFETs

Available in 10 different RDS(on) values and 9 packages

Watch the video (04:25)

600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

Watch the video (02:29)

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