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STW50N65DM6

批量生产
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储存到myST

N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package

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产品概述

描述

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

  • 所有功能

    • Fast-recovery body diode
    • Lower RDS(on) per area vs previous generation
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected
    阅读更多 阅读较少信息

特别推荐

相关应用

工业

All tools & software

    • 产品型号
      		状态
      		描述
      		类型
      		供应商

      STPOWER MOSFET Finder

      批量生产

      用于安卓和iOS的MOSFET产品查找应用

      		 查找器App ST
      STPOWER MOSFET Finder

      描述:

      用于安卓和iOS的MOSFET产品查找应用

All resources

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Resource title
Latest update

产品规格 (1)

Resource title
Latest update
DS13174 N-channel 650 V, 74 mΩ typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package 2.0
10 Jul 2020
10 Jul 2020
DS13174 N-channel 650 V, 74 mΩ typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package 2.0

应用手册 (5)

Resource title
Latest update
AN4250 Fishbone diagram for power factor correction 1.1
13 Sep 2018
13 Sep 2018
AN4250 Fishbone diagram for power factor correction 1.1
AN5427 MDmesh DM6: the last ST super-junction technology with fast recovery diode 1.0
17 Dec 2019
17 Dec 2019
AN5427 MDmesh DM6: the last ST super-junction technology with fast recovery diode 1.0
AN2842 Paralleling of power MOSFETs in PFC topology 1.4
13 Sep 2018
13 Sep 2018
AN2842 Paralleling of power MOSFETs in PFC topology 1.4
AN2344 Power MOSFET avalanche characteristics and ratings 1.3
13 Sep 2018
13 Sep 2018
AN2344 Power MOSFET avalanche characteristics and ratings 1.3
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1
13 Sep 2018
13 Sep 2018
AN4337 The avalanche issue: comparing the impacts of the IAR and EAS parameters 1.1

技术文档 (1)

Resource title
Latest update
TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0
13 Nov 2016
13 Nov 2016
TN1156 Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products 1.0

用户手册 (1)

Resource title
Latest update
UM1575 Spice model tutorial for Power MOSFETs 1.3
21 Oct 2016
21 Oct 2016
UM1575 Spice model tutorial for Power MOSFETs 1.3

宣传册 (5)

Resource title
Latest update
300-1200 V MDmesh 1.0
22 Feb 2021
22 Feb 2021
300-1200 V MDmesh 1.0
400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
05 Jun 2020
05 Jun 2020
400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
600 - 650 V MDmesh™ DM6 fast-recovery SJ MOSFETs boost efficiency and robustness 1.0
29 Jan 2020
29 Jan 2020
600 - 650 V MDmesh™ DM6 fast-recovery SJ MOSFETs boost efficiency and robustness 1.0
ST MOSFET Finder, the new app for Android and iOS 1.0
08 May 2020
08 May 2020
ST MOSFET Finder, the new app for Android and iOS 1.0
STPOWER MOSFETs in the innovative TO-LL The latest evolution in SMD power packages 1.0
06 Oct 2020
06 Oct 2020
STPOWER MOSFETs in the innovative TO-LL The latest evolution in SMD power packages 1.0

手册 (2)

Resource title
Latest update
600 - 650 V MDmesh DM6: Fast-recovery body diode SJ MOSFETs 1.0
29 Jun 2020
29 Jun 2020
600 - 650 V MDmesh DM6: Fast-recovery body diode SJ MOSFETs 1.0
TO-LL: the latest evolution in SMD power packages STPOWER MOSFET SJ MDmesh M6 and DM6 1.0
24 Jul 2020
24 Jul 2020
TO-LL: the latest evolution in SMD power packages STPOWER MOSFET SJ MDmesh M6 and DM6 1.0

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STW50N65DM6

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Symbols

Symbols

Footprints

Footprints

3D model

3D models

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Resource title
Latest update

SPICE models (1)

Resource title
Latest update
STW50N65DM6 Pspice Model 1.0
25 Nov 2019
25 Nov 2019
STW50N65DM6 Pspice Model 1.0

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STW50N65DM6
批量生产
TO-247 工业 Ecopack2

STW50N65DM6

Package:

TO-247

Material Declaration**:

PDF XML
More Info

Marketing Status

批量生产

Package

TO-247

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度（ºC） Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STW50N65DM6 Available at 4 distributors

经销商的可用性STW50N65DM6

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 100 1 马上订购
RS COMPONENTS EUROPE 94 1 马上订购
MOUSER WORLDWIDE 100 1 马上订购
Farnell Element14 EUROPE 200 1 马上订购

代理商库存报告日期: 2021-05-06

代理商名称

DIGIKEY

库存

100

Min.Order

1

地区

WORLDWIDE 马上订购

RS COMPONENTS

库存

94

Min.Order

1

地区

EUROPE 马上订购

MOUSER

库存

100

Min.Order

1

地区

WORLDWIDE 马上订购

Farnell Element14

库存

200

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2021-05-06

Free Sample Buy Direct
批量生产
EAR99 NEC Tube TO-247 - - CHINA 4.8 / 1k

STW50N65DM6

供货状态

批量生产

ECCN (US)

EAR99
更多信息

Budgetary Price (US$)*/Qty

4.8 / 1k

经销商的可用性STW50N65DM6

代理商名称
地区 库存 最小订购量 第三方链接
DIGIKEY WORLDWIDE 100 1 马上订购
RS COMPONENTS EUROPE 94 1 马上订购
MOUSER WORLDWIDE 100 1 马上订购
Farnell Element14 EUROPE 200 1 马上订购

代理商库存报告日期: 2021-05-06

代理商名称

DIGIKEY

库存

100

Min.Order

1

地区

WORLDWIDE 马上订购

RS COMPONENTS

库存

94

Min.Order

1

地区

EUROPE 马上订购

MOUSER

库存

100

Min.Order

1

地区

WORLDWIDE 马上订购

Farnell Element14

库存

200

Min.Order

1

地区

EUROPE 马上订购

代理商库存报告日期: 2021-05-06

ECCN (EU)

NEC

包装类型

Tube

封装

TO-247

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

4.8 / 1k

Country of Origin

CHINA

(*) 建议转售单价（美元）仅用于预算用途。如需以当地货币计价的报价，请联系您当地的 ST销售办事处 或我们的 经销商 。

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