STW70N60M2-4

批量生产

N沟道600 V、0.031 Ohm典型值、68 A MDmesh M2功率MOSFET,TO247-4封装

下载数据手册
概述
样片和购买
解决方案
资源
工具与软件
质量与可靠性
eDesignSuite
开始
Partner products
Sales Briefcase
  • This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    主要特性

    • Excellent switching performance thanks to the extra driving source pin
    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected

移动应用

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS11795
      N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2 Power MOSFET in a TO247-4 package
      1.0
      721.61 KB
      PDF
      DS11795

      N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2 Power MOSFET in a TO247-4 package

    • 描述 版本 文档大小 操作
      AN4250
      Fishbone diagram for power factor correction
      1.1
      772.32 KB
      PDF
      AN4829
      Fishbone diagrams for a forward converter
      1.1
      1.35 MB
      PDF
      AN4720
      Half bridge resonant LLC converters and primary side MOSFET selection
      1.0
      1.4 MB
      PDF
      AN4742
      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology
      1.0
      1.29 MB
      PDF
      AN4406
      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies
      1.0
      652.78 KB
      PDF
      AN2842
      Paralleling of power MOSFETs in PFC topology
      1.4
      896.91 KB
      PDF
      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
      PDF
      AN5318
      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
      1.0
      1.09 MB
      PDF
      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN4829

      Fishbone diagrams for a forward converter

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

    • 描述 版本 文档大小 操作
      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
      1.0
      657.71 KB
      PDF
      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

    • 描述 版本 文档大小 操作
      UM1575
      Spice model tutorial for Power MOSFETs
      1.3
      1.51 MB
      PDF
      UM1575

      Spice model tutorial for Power MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions 1.0
      568.16 KB
      PDF
      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode 1.1
      203.54 KB
      PDF
      500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET 1.0
      145.61 KB
      PDF
      600/650 V MDmesh™ M2 1.0
      788.16 KB
      PDF
      ST MOSFET Finder, the new app for Android and iOS 1.0
      305.22 KB
      PDF
      STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series 1.0
      707.88 KB
      PDF

      300-1200 V MDmesh:The most complete SJ MOSFETs offer for (H)EV power solutions

      400/650 V MDmesh™ DM2 :STPOWER MOSFET series with fast-recovery body diode

      500/650 V MDmesh M2 series: High Voltage Super-junction MOSFET

      600/650 V MDmesh™ M2

      ST MOSFET Finder, the new app for Android and iOS

      STPOWER MOSFET MDmesh M2: 600 to 650 V ST’s super-junction HV MOSFET series

    • 描述 版本 文档大小 操作
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
      PDF

      Electric vehicle (EV) ecosystem

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
STW70N60M2-4
批量生产
TO247-4 工业 Ecopack2

STW70N60M2-4

Package:

TO247-4

Material Declaration**:

Marketing Status

批量生产

Package

TO247-4

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
Budgetary Price (US$)*/Qty
最小值
最大值
STW70N60M2-4 没有经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Tube TO247-4 - - CHINA

STW70N60M2-4

供货状态

批量生产

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

包装类型

Tube

封装

TO247-4

Operating Temperature (°C)

(最小值)

-

(最大值)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商