产品概述
描述
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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所有功能
- Excellent switching performance thanks to the extra driving source pin
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
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意法半导体提供全新的高压MDmesh M6和M9 STPOWER MOSFET，这些产品采用紧凑且散热效率高的TO-LL表面贴装型封装，可同时提供高的电气和热效率、外形紧凑和节省空间等特性，适用于SMPS、数据中心和太阳能微逆变器等电源转换应用。这些器件具有附加的Kelvin源引脚，可减小接通/关断开关损耗，有助于设计人员进一步提高效率。
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STW70N60M2-4
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符号
封装
3D模型
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 封装 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | 温度（ºC） | Operating Temperature (°C) (min) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STW70N60M2-4 | | | distributors 无法联系到经销商，请联系我们的销售办事处 | TO247-4 | Tube | CHINA | EAR99 | NEC | - | - | - | |||
STW70N60M2-4 NRND