STW75N65DM6-4

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产品概述

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该高电压N-沟道功率MOSFET来自MDmesh DM6快速恢复二极管系列。与之前的MDmesh快速恢复二极管相比，DM6兼具超低恢复电荷（Q_rr）和超快恢复时间（t_rr），并且在单位面积的R_DS(on)值方面有了极大改进，采用市场上最高效的开关行为之一，适用于要求最苛刻的高效桥式拓扑和ZVS移相转换器。

所有功能
快速恢复体二极管

与上一代相比，具有更低的单位面积R_DS(on)值

低栅极电荷、输入电容和电阻

经过100％雪崩测试

非常高的dv / dt耐用性

稳压保护

分离驱动源极引脚使其具有出色的开关性能
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600 V and 650 V MDmesh M2 MOSFET series

Ideal for resonant-type power supplies

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