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Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
主要特性
- Very low on-resistance
- 100% avalanche tested
- Gate charge minimized
- Avalanche ruggedness
- High speed switching
- Very low intrinsic capacitances
精选 视频
All tools & software
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产品规格 (1)
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| 19 Sep 2016 |
19 Sep 2016
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应用手册 (4)
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技术文档 (1)
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| 13 Nov 2016 |
13 Nov 2016
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用户手册 (1)
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| 21 Oct 2016 |
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宣传册 (2)
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手册 (1)
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| 15 Jun 2018 |
15 Jun 2018
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STW9N150
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
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硬件型号、CAD库及SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 08 Jan 2015 |
08 Jan 2015
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样片和购买
| 产品型号 | 从分销商订购 | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||
| STW9N150 | 9 distributors | Free Sample Buy Direct |
批量生产
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EAR99 | NEC | Tube | TO-247 | - | - | CHINA | ||
