产品概述
描述
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.-
所有功能
- Very low on-resistance
- 100% avalanche tested
- Gate charge minimized
- Avalanche ruggedness
- High speed switching
- Very low intrinsic capacitances
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SPICE models (1)
Resource title | 版本 | Latest update | ||
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ZIP | 2.0 | 08 Jan 2015 | 08 Jan 2015 |