ST is pursuing the development of wide bandgap transistors with silicon carbide (SiC) MOSFETs being the first members of this family of high-efficiency products.
Some features of SiC MOSFETs include:
- Industry’s highest temperature rating of 200 °C
- Superior switching performance in all temperature ranges compared to the best-in-class IGBTs
- Very low RDS(on) * area values even at high temperatures as compared to silicon super junction MOSFETs
These improvements translate into benefits such as simplified thermal design of power electronic systems (reduced cooling requirements) as well as BOM cost reduction, thanks to the trim down of passive components.
New 650 V, 22 mΩ typ (at 150 °C) SiC power MOSFET
The new 650 V SiC MOSFET is currently sampling to lead customers and will soon complete the qualification to AEC-Q101.