产品概述
描述
The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.
-
所有功能
- Complies with the following standards:
IEC 61000-4-2 level 4 ±15 kV (air discharge) ±8 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3B HBM (human body model): ≥8kV - Breakdown voltage VBR = 8.2 V
- High peak power dissipation: 500 W (8/20 μs waveform)
- Unidirectional device
- Low leakage current (< 0.5 μA @ 5 V) Benefits
High EOS and ESD protection level High integration Suitable for high density boards - ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge
- Complies with the following standards:
EDA符号、封装和3D模型
STMicroelectronics - ESDA8V2-1J
为您的应用下载所有EDA符号、封装和3D模型，加快您的设计速度。您可以从大量CAD格式中进行选择，以匹配您的设计工具链。
符号
封装
3D模型
全部资源
| 资源标题 | 版本 | Latest update |
|---|
SPICE models (1)
| 资源标题 | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
CAD Symbol & Footprint models (2)
| 资源标题 | 版本 | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 27 May 2020 | 27 May 2020 | |
| ZIP | 1.0 | 16 Mar 2020 | 16 Mar 2020 |
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Breakdown Voltage (V) (min) | Country of Origin | Budgetary Price (US$)*/Qty | 单价(US$) | Country of Origin | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| ESDA8V2-1J | distributors 无法联系到经销商，请联系我们的销售办事处 | 批量生产 | EAR99 | NEC | Tape and Reel | SOD323 | - | - | 8.2 | CHINA | | 0.033 | CHINA | ||
distributors
无法联系到经销商，请联系我们的销售办事处
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