Manufactured using an optimized process layout designed to improve RF performance, ST's radio frequency transistors exhibit outstanding RF gain and power saturation, higher breakdown voltage, improved ruggedness and reliability (higher MTTF), resulting in high-performance and cost-effective solutions.
With more than 35 years’ experience, ST offers a broad portfolio of RF power products operating from 7 to 100 V and for applications ranging from 1 MHz to 4 GHz such as:
Several package options are available, from SMD plastic to ceramic and ST’s innovative STAC® air cavity package featuring 25% lower thermal resistance, improved RF performance and best-in-class reliability.
In addition to a wide range of evaluation boards, ST offers several software simulators and analysis tools to help engineers quickly get their designs to market.
28/32V LDMOS, IDDE technology boost efficiency & robustness
The latest LDMOS series for applications from 1 MHz to 2 GHz
50 V DMOS RF MOSFET,采用STAC®气腔封装
业内最低的热阻
防潮50 V RF DMOS晶体管
凝胶填充封装提高了稳定性
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