我们的7-13.6V LDMOS晶体管结合了意法半导体先进的LDMOS技术以及SOT-89、PowerFLAT™和PowerSO-10RF等表面贴封装的优势，能够为最高2 GHz的应用提供高性价比解决方案，如商业和公共安全便携式无线电台、航海用便携式无线电台、EPIRB、声纳浮标、UHF RFID、自动抄表器、VHF/UHF报警系统和无线数据调制解调器。
主要特性
- 工作频率高达2 kHz
- 输出功率：1W至35W
- 效率 >60%
- 高增益和线性
- 宽带性能
- 以晶片形式提供
- PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
- PD55025-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD84001 RF power transistor the LdmoST plastic family
- PD55008-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD55035STR1-E 35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor
- PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
- PD54008L-E RF power transistors, the LdmoST plastic family