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  • The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz
    • POUT (@36V) = 70 W with 18.5 dB gain @ 960 MHz
    • BeO free package
    • In compliance with the 2002/95/EC European directive

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技术文档

    • 描述 版本 文档大小 操作
      DS6121
      RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
      4.1
      201.29 KB
      PDF
      DS6121

      RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      LET9045C ADS model 1.0
      437.66 KB
      ZIP

      LET9045C ADS model

出版刊物和宣传资料

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      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      935.58 KB
      PDF
      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      212.64 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness