产品概述
描述
The LET9045F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045F is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.-
所有功能
- Excellent thermal stability
- Common source configuration
- POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz
- POUT (@36V) = 70 W with 18.5 dB gain @ 960 MHz
- BeO free package
- In compliance with the 2002/95/EC European directive
All resources
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产品规格 (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 19 Sep 2016 | 19 Sep 2016 |
宣传册 (4)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 06 Oct 2020 | 06 Oct 2020 | |||
| 07 Jul 2020 | 07 Jul 2020 | |||
| 07 Jul 2020 | 07 Jul 2020 | |||
| 17 Dec 2019 | 17 Dec 2019 |
EDA Symbols, Footprints and 3D Models
STMicroelectronics - LET9045F
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
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ADS models (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 11 Dec 2020 | 11 Dec 2020 |
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| LET9045F | 批量生产 | M250 | 工业 | Ecopack1 | |
LET9045F
Package:
M250Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持 。
