概述
资源
工具与软件
解决方案
eDesignSuite
质量与可靠性
Sales Briefcase
开始
样片和购买
Partner products
  • The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz.

    主要特性

    • Excellent thermal stability
    • Common source configuration push-pull
    • POUT= 120 W with 18 dB gain @ 860 MHz
    • BeO-free package

适合您的资源

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS6162
      RF power transistor from the LdmoST family of n-channel ehancement-mode lateral MOSFETs
      5.1
      202.94 KB
      PDF
      DS6162

      RF power transistor from the LdmoST family of n-channel ehancement-mode lateral MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      LET9120 ADS model 1.0
      394.15 KB
      ZIP

      LET9120 ADS model

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      935.58 KB
      PDF
      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      212.64 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness