The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly.
- Excellent thermal stability
- Common source configuration
- POUT = 3 W with 12 dB gain @ 500 MHz
- New RF plastic package
|产品型号||从分销商订购||从ST订购||供货状态||ECCN (US)||ECCN (EU)||包装类型||封装||温度（ºC）||Budgetary Price (US$)*/Qty|
|EAR99||NEC||Tube||PowerSO-10RF (formed lead)||-||-|