产品概述
描述
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly.-
所有功能
- Excellent thermal stability
- Common source configuration
- POUT = 3 W with 12 dB gain @ 500 MHz
- New RF plastic package
EDA符号、封装和3D模型
全部资源
Resource title | 版本 | Latest update |
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ADS models (1)
Resource title | 版本 | Latest update | ||
---|---|---|---|---|
ZIP | 1.0 | 11 Dec 2020 | 11 Dec 2020 |
质量与可靠性
产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
---|---|---|---|---|---|
PD54003-E | 批量生产 | PowerSO-10RF (formed lead) | 工业 | Ecopack2 | |
PD54003-E
Package:
PowerSO-10RF (formed lead)Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持。