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  • The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for portable radio.

    The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V
    • New RF plastic package

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技术文档

    • 描述 版本 文档大小 操作
      DS4707
      RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
      3.1
      507.8 KB
      PDF
      DS4707

      RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

    • 描述 版本 文档大小 操作
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package

硬件型号、CAD库及SVD

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      PD54008-E ADS model 1.0
      340.1 KB
      ZIP
      PD54008S-E ADS model 1.0
      334.8 KB
      ZIP

      PD54008-E ADS model

      PD54008S-E ADS model