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  • The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • POUT = 30 W with 14dB gain @ 945 MHz / 28 V
    • New RF plastic package

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技术文档

    • 描述 版本 文档大小 操作
      DS4877
      RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
      3.1
      507.24 KB
      PDF
      DS4877

      RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

    • 描述 版本 文档大小 操作
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      935.58 KB
      PDF
      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      212.64 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness

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