概观
工具与软件
资源
解决方案
质量与可靠性
Sales Briefcase
eDesignSuite
开始
样片和购买
Partner products
  • The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • POUT = 70 W with 14.7dB gain @945 MHz/28 V
    • New RF plastic package

样片和购买

型号
Marketing Status
Quantity
Budgetary Price (US$)*
Package
Packing Type
ECCN (US)
Country of Origin
Order from Distributors
Order from ST
PD57070S-E
NRND
- - PowerSO-10RF (straight lead) Tube EAR99 - No availability of distributors reported, please contact our sales office

PD57070S-E

Marketing Status

NRND

Quantity

-

Unit Price (US$)

*

Unit Price (US$)

-

Package

PowerSO-10RF (straight lead)

Packing Type

Tube

ECCN (US)

EAR99

Country of Origin

-

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

Recommended for you

开发工具硬件

    • 型号

      Mismatch analysis for RF transistor circuits based on Agilent ADS

      Large signal load stability for RF transistors based on Agilnet ADS

00 Files selected for download

技术文档

    • 描述 版本 文档大小 Action
      DS4823
      RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
      2.1
      515.48 KB
      PDF
      DS4823

      RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 Action
      28/32V LDMOS; IDDE technology boost efficiency & robustness 1.0
      221.33 KB
      PDF

      28/32V LDMOS; IDDE technology boost efficiency & robustness

型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
PD57070S-E
NRND
PowerSO-10RF (straight lead) 工业 Ecopack2

PD57070S-E

Package:

PowerSO-10RF (straight lead)

Material Declaration**:

Marketing Status

NRND

Package

PowerSO-10RF (straight lead)

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.