The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
- Excellent thermal stability
- Common source configuration
- POUT = 70 W with 14.7dB gain @945 MHz/28 V
- New RF plastic package
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|型号||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerSO-10RF (straight lead)||工业||Ecopack2||
Package:PowerSO-10RF (straight lead)
PowerSO-10RF (straight lead)
RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.