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  • The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package, PowerFLAT™.

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC european directive

适合您的资源

评估工具

    • 产品型号

      使用PD84001 + PD84008L-E + LPF的4 W / 400 - 470 MHz参考设计

      基于PD84008L-E的5 W / 740 - 950 MHz评估板

      基于PD84008L-E的6 W / 380 - 512 MHz评估板

00 选择要下载的文档

技术文档

    • 描述 版本 文档大小 操作
      DS5616
      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
      3.1
      198.55 KB
      PDF
      DS5616

      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      PD84008L-E ADS model 1.0
      313.91 KB
      ZIP

      PD84008L-E ADS model