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  • The PD85006L-E is a common source N-channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.

    PD85006L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT™. PD85006L-E’s superior linearity performance makes it an ideal solution for mobile radio applications.

    主要特性

    • In compliance with the 2002/95/EC european directive
    • Excellent thermal stability
    • POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V
    • Common source configuration
    • ESD protection
    • Plastic package

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