RF2L15200CB4

批量生产
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200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor

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产品概述

描述

The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class AB, B or C for all typical modulation formats.

  • 所有功能

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the european directive 2002/95/EC

EDA符号、封装和3D模型

STMicroelectronics - RF2L15200CB4

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符号

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3D model

3D模型

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
RF2L15200CB4
批量生产
LBB 工业 N/A

RF2L15200CB4

Package:

LBB

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

LBB

Grade

Industrial

RoHS Compliance Grade

N/A

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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产品型号
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供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Budgetary Price (US$)*/Qty
最小值
最大值
RF2L15200CB4 Available at distributors

经销商的可用性 RF2L15200CB4

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批量生产
EAR99 NEC Tape and Reel LBB - -

RF2L15200CB4 批量生产

封装:
LBB
ECCN (US):
EAR99

产品型号:

RF2L15200CB4

ECCN (EU):

NEC

包装类型:

Tape and Reel

Operating Temperature (°C)

Min:

-

Max:

-

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商