RF2L42008CG2

批量生产
Design Win

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

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产品概述

描述

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FETs, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.

  • 所有功能

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the european directive 2002/95/EC

EDA符号、封装和3D模型

STMicroelectronics - RF2L42008CG2

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符号

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封装

3D model

3D模型

质量与可靠性

产品型号 Marketing Status 封装 等级规格 符合RoHS级别 材料声明**
RF2L42008CG2
批量生产
E2 工业 N/A

RF2L42008CG2

Package:

E2

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

E2

Grade

Industrial

RoHS Compliance Grade

N/A

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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产品型号
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供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Country of Origin
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最小值
最大值
RF2L42008CG2 Available at distributors

经销商的可用性 RF2L42008CG2

代理商名称
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批量生产
EAR99 NEC Tape and Reel E2 - - CHINA

RF2L42008CG2 批量生产

封装:
E2
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

产品型号:

RF2L42008CG2

ECCN (EU):

NEC

包装类型:

Tape and Reel

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商