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  • The device is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for applications from 1 to 1000 MHz.

    主要特性

    • Excellent thermal stability
    • Common source configuration Push-pull
    • POUT = 60 W with 16 dB gain @ 860 MHz
    • BeO-free package

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技术文档

    • 描述 版本 文档大小 操作
      DS11102
      RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs
      1.0
      222.9 KB
      PDF
      DS11102

      RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      935.58 KB
      PDF
      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      212.64 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness

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