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  • The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity.

    主要特性

    • Excellent thermal stability
    • POUT = 60W with 13dB gain @ 945MHz
    • Common source configuration
    • In compliance with the 2002/95/EC european directive
    • BeO free package

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技术文档

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      DS1753
      RF power transistor the LdmoST family
      7.2
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      DS1753

      RF power transistor the LdmoST family

硬件型号、CAD库及SVD

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      SD57060 ADS model 1.0
      490.3 KB
      ZIP

      SD57060 ADS model

出版刊物和宣传资料

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      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
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      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
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      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness