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  • The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.

    主要特性

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range
    • In compliance with the European Directive 2002/95/EC

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技术文档

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      DS12765
      RF power LDMOS transistor for frequencies up to 1.5 GHz
      2.0
      322.19 KB
      PDF
      DS12765

      RF power LDMOS transistor for frequencies up to 1.5 GHz

出版刊物和宣传资料

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      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      935.58 KB
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      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      212.64 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness