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  • The ST9060C is a 28/32 V common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. The device can be used in Class A, AB and C for all typical modulation formats.

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • Integrated ESD protection – HBM Class 2
    • POUT (@28 V) = 80 W with 17 dB gain / 70% efficiency @945 MHz
    • BeO free package
    • In compliance with European Directive 2002/95/EC

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技术文档

    • 描述 版本 文档大小 操作
      DS12437
      RF Power LDMOS transistor HF up to 1.5 GHz
      2.0
      297.65 KB
      PDF
      DS12437

      RF Power LDMOS transistor HF up to 1.5 GHz

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      935.58 KB
      PDF
      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      212.64 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness