STAC1214-350

批量生产

350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

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  • The STAC1214-350 is a 50 V common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for L-band radar applications.

    主要特性

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internal input matching for ease of use
    • Large positive and negative gate/source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC

特别推荐

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STAC1214-350

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Symbols

Symbols

Footprints

Footprints

3D model

3D models

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Budgetary Price (US$)*/Qty
最小值
最大值
STAC1214-350 无法联系到经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Loose Piece STAC780-4F - -

STAC1214-350

供货状态

批量生产

ECCN (US)

EAR99

ECCN (EU)

NEC

包装类型

Loose Piece

封装

STAC780-4F

Operating Temperature (°C)

(最小值)

-

(最大值)

-

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商