产品概述
描述
The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC package technology.
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所有功能
- Excellent thermal stability
- Common source push-pull configuration
- POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz
- Pulse conditions: 1ms, 10%
- In compliance with the 2002/95/EC European directive
- ST air-cavity STAC package technology
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特别推荐
EDA符号、封装和3D模型
STMicroelectronics - STAC4932B
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符号
封装
3D模型
全部资源
| 资源标题 | 版本 | 更新时间 |
|---|
ADS models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
质量与可靠性
| 产品型号 | Marketing Status | 封装 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| STAC4932B | NRND | STAC780-4B | 工业 | Ecopack1 | |
STAC4932B
Package:
STAC780-4BMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
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| 产品型号 | Order from distributors | 从ST订购 | 供货状态 | ECCN (US) | ECCN (EU) | 包装类型 | 封装 | 温度（ºC） | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||
| STAC4932B | distributors 无法联系到经销商，请联系我们的销售办事处 | NRND | EAR99 | NEC | Loose Piece | STAC780-4B | - | - | | ||
distributors
无法联系到经销商，请联系我们的销售办事处
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