STAC4932F

批量生产

1200W脉冲 - 100V HF/VHF DMOS晶体管,STAC无法兰封装

下载数据手册
概述
样片和购买
解决方案
Documentation
CAD Resources
工具与软件
质量与可靠性
eDesignSuite
开始
Partner products
Sales Briefcase
  • The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.

    The STAC4932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC.

    主要特性

    • Excellent thermal stability
    • Common source push-pull configuration
    • POUT = 1000 W min. (1200 W typ.) with 26 dB gain at 123 MHz
    • Pulse conditions: 1ms, 10%
    • In compliance with the 2002/95/EC European directive
    • ST air-cavity STAC packaging technology

特别推荐

相关应用

医疗保健

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STAC4932F

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Symbols

Symbols

Footprints

Footprints

3D model

3D models

样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Budgetary Price (US$)*/Qty
最小值
最大值
STAC4932F 无法联系到经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Loose Piece STAC780-4F - - 67.9 / 1k

STAC4932F

供货状态

批量生产

ECCN (US)

EAR99

ECCN (EU)

NEC

包装类型

Loose Piece

封装

STAC780-4F

Operating Temperature (°C)

(最小值)

-

(最大值)

-

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商