STAC4932F

已停产
Design Win

1200W脉冲 - 100V HF/VHF DMOS晶体管,STAC无法兰封装

下载数据手册

产品概述

描述

The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.

The STAC4932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC.

  • 所有功能

    • Excellent thermal stability
    • Common source push-pull configuration
    • POUT = 1000 W min. (1200 W typ.) with 26 dB gain at 123 MHz
    • Pulse conditions: 1ms, 10%
    • In compliance with the 2002/95/EC European directive
    • ST air-cavity STAC packaging technology

EDA符号、封装和3D模型

STMicroelectronics - STAC4932F

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型