STAC4932F1MR

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350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package

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  • The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz.

    The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage conditions.
    This device contains Beryllium oxide (BeO), which is hazardous if inhaled or ingested.

    主要特性

    • Improved ruggedness V(BR)DSS > 200 V
    • Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
    • POUT = 450 W typ. with 24 dB gain at 123 MHz
    • In compliance with the 2002/95/EC European directive
    • Moisture resistant package specifically designed to operate in extreme environments
    • Drying recommendation before soldering:
      • 48 hrs at 125 °C
    • Back finishing:
      • Sn96.5/Ag3/Cu0.5 solder
      • Base flatness < 0.2 mm
      • Gold content < 0.1%
      • Minimum solder thickness > 2 μm

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STMicroelectronics - STAC4932F1MR

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样片和购买

产品型号
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供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Budgetary Price (US$)*/Qty
最小值
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STAC4932F1MR 无法联系到经销商,请联系我们的销售办事处
批量生产
EAR99 NEC Loose Piece STAC780-4F - -

STAC4932F1MR

供货状态

批量生产

ECCN (US)

EAR99

ECCN (EU)

NEC

包装类型

Loose Piece

封装

STAC780-4F

Operating Temperature (°C)

(最小值)

-

(最大值)

-

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商