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  • The STAC9200 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband applications in the HF to 1300 MHz frequency range. The STAC9200 benefits from the latest generation of efficient STAC package technology.

    主要特性

    • Improved ruggedness: V(BR)DSS > 80 V
    • Load mismatch 65:1 all phases at 200 W, 32 V, 860 MHz, PW 1ms, DC = 10%
    • POUT = 200 W min. (230 W typ.) with 16 dB gain at 860 MHz
    • In compliance with the 2002/95/EC European directive
    • ST air-cavity STAC packaging technology

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技术文档

    • 描述 版本 文档大小 操作
      DS9997
      200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package
      4.0
      362.59 KB
      PDF
      DS9997

      200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package

出版刊物和宣传资料

    • 描述 版本 文档大小 操作
      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz 1.0
      935.58 KB
      PDF
      28/32V LDMOS: IDDE technology boost efficiency & robustness 1.0
      212.64 KB
      PDF

      28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz

      28/32V LDMOS: IDDE technology boost efficiency & robustness