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  • The STAP85025S is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution for the car mobile radio.

    The STAP® ST plastic package has been designed to offer high reliability and high power capability. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC European directive

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样片和购买

产品型号
从分销商订购
从ST订购
供货状态
ECCN (US)
ECCN (EU)
包装类型
封装
温度(ºC) Budgetary Price (US$)*/Qty
最小值
最大值
STAP85025S 没有经销商,请联系我们的销售办事处
预览
EAR99 NEC Tube PowerSO 2 - -

STAP85025S

供货状态

预览

ECCN (US)

EAR99

ECCN (EU)

NEC

包装类型

Tube

封装

PowerSO 2

Operating Temperature (°C)

(最小值)

-

(最大值)

-

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商