The STAP85025S is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution for the car mobile radio.
The STAP® ST plastic package has been designed to offer high reliability and high power capability. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.
- Excellent thermal stability
- Common source configuration
- POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
- Plastic package
- ESD protection
- In compliance with the 2002/95/EC European directive
|Resource title||Latest update|
|09 Dec 2015||
09 Dec 2015
CAD/EDA Symbols, Footprints and Models
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